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4M x 32-Bit Dynamic RAM Module
HYM 324020S/GS-50/-60
Advanced Information
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4 194 304 words by 32-bit organization (alternative 8 388 608 words by 16-bit) Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 5 V ( 10 %) supply Low power dissipation max. 5280 mW active (HYM 324020S/GS-50) max. 4840 mW active (HYM 324020S/GS-60) CMOS - 44 mW standby TTL -88 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 8 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module with 22.86 mm (900 mil) height Utilizes eight 4Mx4-DRAMs in 300mil wide SOJ packages 2048 refresh cycles / 32 ms Optimized for use in byte-write non-parity applications Tin-Lead contact pads (S - version) Gold contact pads (GS - version)
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Semiconductor Group
1
12.95
HYM 324020S/GS-50/-60 4M x 32-Bit
The HYM 324020S/GS-50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 32-bit in a 72-pin single-in-line package comprising eight HYB 5117400BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 F ceramic decoupling capacitors on a PC board. The HYM 324020S/GS-50/-60 can also be used as a 8 388 608 words by 16-bits dynamic RAM module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, ..., DQ15 and DQ31, respectively. Each HYB 5117400BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 324020S/GS-50/-60 dictates the use of early write cycles. Ordering Information Type HYM 324020S-50 HYM 324020S-60 HYM 324020GS-50 HYM 324020GS-60 Ordering Code on request Q67100-Q979 on request Q67100-Q2005 Package L-SIM-72-12 L-SIM-72-12 L-SIM-72-12 L-SIM-72-12 Description DRAM Module (access time 50 ns) DRAM Module (access time 60 ns) DRAM Module (access time 50 ns) DRAM Module (access time 60 ns)
Semiconductor Group
2
HYM 324020S/GS-50/-60 4M x 32-Bit
Pin Configuration
Pin Names
VSS DQ16 DQ17 DQ18 DQ19 N.C. A1 A3 A5 A10 DQ20 DQ21 DQ22 DQ23 N.C. A8 N.C. N.C. N.C. VSS CAS2 CAS1 N.C. WE DQ8 DQ9 DQ10 DQ11 DQ12 VCC DQ13 DQ14 DQ15 PD0 PD2 N.C. 1 DQ0 2 3 DQ1 4 5 DQ2 6 7 DQ3 8 9 VCC 10 11 A0 12 13 A2 14 15 A4 16 17 A6 18 19 DQ4 20 21 DQ5 22 23 DQ6 24 25 DQ7 26 27 A7 28 29 VCC 30 31 A9 32 33 RAS2 34 35 N.C. 36 37 N.C. 38 39 CAS0 40 41 CAS3 42 43 RAS0 44 45 N.C. 46 47 N.C. 48 49 DQ24 50 51 DQ25 52 53 DQ26 54 55 DQ27 56 57 DQ28 58 59 DQ29 60 61 DQ30 62 63 DQ31 64 65 N.C. 66 67 PD1 68 69 PD3 70 71 VSS 72
A0-A10 DQ0-DQ31 CAS0 - CAS3 RAS0, RAS2 WE
Address Inputs for HYM 324020S/GS Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power (+ 5 V) Ground Presence Detect Pin No Connection
VCC VSS
PD N.C.
Presence Detect Pins -50 PD0 PD1 PD2 PD3 -60
VSS
N.C.
VSS
N.C. N.C. N.C.
VSS VSS
Semiconductor Group
3
HYM 324020S/GS-50/-60 4M x 32-Bit
RAS0 CAS0 DQ0-DQ3 CAS RAS I/O1-I/O4 OE D0 CAS RAS I/O1-I/O4 OE D1
DQ4-DQ7 CAS1 DQ8-DQ11
CAS RAS I/O1-I/O4 OE D2 CAS RAS I/O1-I/O4 OE D3
DQ12-DQ15
RAS2 CAS2 CAS RAS I/O1-I/O4 OE D4 CAS RAS I/O1-I/O4 OE D5
DQ16-DQ19
DQ20-DQ23
CAS3 CAS RAS I/O1-I/O4 OE D6 CAS RAS I/O1-I/O4 D7 OE D0 - D7 D0 - D7 C0 - C7 VSS
DQ24-DQ27 DQ28-DQ31
A0 - A10 WE VCC
Block Diagram
Semiconductor Group
4
HYM 324020S/GS-50/-60 4M x 32-Bit
Absolute Maximum Ratings Operation temperature range ......................................................................................... 0 to + 70 C Storage temperature range......................................................................................... - 55 to 125 C Input/output voltage ............................................................................-0.5V to min (Vcc+0.5, 7.0) V Power supply voltage...................................................................................................... - 1 to + 7 V Power dissipation................................................................................................................... 6.72 W Data out current (short circuit) ................................................................................................ 50 mA Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DC Characteristics TA = 0 to 70 C, VSS = 0 V, VCC = 5 V 10 %; tT = 5 ns Parameter Input high voltage Input low voltage Output high voltage (IOUT = - 5 mA) Output low voltage (IOUT = 4.2 mA) Input leakage current (0 V VIH Vcc + 0.3V, all other pins = 0 V) Output leakage current (DO is disabled, 0 V VOUT Vcc + 0.3V) Average VCC supply current: -50 ns version -60 ns version (RAS, CAS, address cycling: tRC = tRC min.) Symbol Limit Values min. max. Vcc+0.5 0.8 - 0.4 20 10 2.4 - 0.5 2.4 - - 20 - 10 Unit Test Condition V V V V A A
1) 1) 1) 1) 1)
VIH VIL VOH VOL II(L) IO(L) ICC1
1)
- -
960 880 16
mA mA mA
2) 3) 4) 2) 3) 4)
Standby VCC supply current (RAS = CAS = VIH)
Average VCC supply current, during RAS-only refresh cycles: -50 ns version -60 ns version (RAS cycling, CAS = VI,H, tRC = tRC min.)
ICC2 ICC3
-
-
- -
960 880
mA mA
2) 4) 2) 4)
Average VCC supply current, ICC4 during fast page mode: -50 ns version -60 ns version (RAS = VIL, CAS, address cycling:tPC = tPC min.)
- -
320 280
mA mA
2) 3) 4) 2) 3) 4)
Semiconductor Group
5
HYM 324020S/GS-50/-60 4M x 32-Bit
DC Characteristics (cont'd) TA = 0 to 70 C, VSS = 0 V, VCC = 5 V 10 %; tT = 5 ns Parameter Symbol Limit Values min. max. 8 - Unit Test Condition mA
1)
Standby VCC supply current (RAS = CAS = VCC - 0.2 V)
Average VCC supply current, during CASbefore-RAS refresh mode: -50 ns version -60 ns version (RAS, CAS cycling: tRC = tRC min.)
ICC5 ICC6
- -
960 880
mA mA
2) 4) 2) 4)
Capacitance TA = 0 to 70 C, VCC = 5 V 10 %, f = 1 MHz Parameter Input capacitance (A0 to A10,WE) Input capacitance (RAS0, RAS2) Input capacitance (CAS0 - CAS3) I/O capacitance (DQ0-DQ31) Symbol Limit Values min. max. 75 45 25 15 pF pF pF pF - - - - Unit
CI1 CI2 CI3 CIO
Semiconductor Group
6
HYM 324020S/GS-50/-60 4M x 32-Bit
AC Characteristics 5)6) TA = 0 to 70 C,VCC = 5 V 10 %, tT = 5 ns Parameter
Symbol
Limit Values -50 min. max. - - 10k 10k - - - - 37 25 min. 110 40 60 15 0 10 0 15 20 15 15 60 - 50 32 5 3 - -60 max. - - 10k 10k - - - - 45 30 - - - 50 32
Unit
Note
common parameters
Random read or write cycle time RAS precharge time RAS pulse width CAS pulse width Row address setup time Row address hold time Column address setup time Column address hold time RAS to CAS delay time RAS to column address delay time RAS hold time CAS hold time CAS to RAS precharge time Transition time (rise and fall) Refresh period tRC tRP tRAS tCAS tASR tRAH tASC tCAH tRCD tRAD tRSH tCSH tCRP tT tREF 90 30 50 13 0 8 0 10 18 13 13 50 5 3 - ns ns ns ns ns ns ns ns ns ns ns ns ns ms 7
Read Cycle
Access time from RAS Access time from CAS Access time from column address Column address to RAS lead time Read command setup time Read command hold time Read command hold time referenced to RAS CAS to output in low-Z Output buffer turn-off delay tRAC tCAC tAA tRAL tRCS tRCH tRRH tCLZ tOFF - - - 25 0 0 0 0 0 50 13 25 - - - - - 13 - - - 30 0 0 0 0 0 60 15 30 - - - - - 15 ns ns ns ns ns ns ns ns ns 11 11 8 12 8, 9 8, 9 8,10
Semiconductor Group
7
HYM 324020S/GS-50/-60 4M x 32-Bit
AC Characteristics (cont'd) 5)6) TA = 0 to 70 C,VCC = 5 V 10 %, tT = 5 ns Parameter
Symbol
Limit Values -50 min. max. - - - - - - - min. 10 10 0 15 15 0 10 -60 max. - - - - - - -
Unit
Note
Early Write Cycle
Write command hold time Write command pulse width Write command setup time Write command to RAS lead time Write command to CAS lead time Data setup time Data hold time tWCH tWP tWCS tRWL tCWL tDS tDH 8 8 0 13 13 0 10 ns ns ns ns ns ns ns 14 14 13
Fast Page Mode Cycle
Fast page mode cycle time CAS precharge time Access time from CAS precharge RAS pulse width CAS precharge to RAS Delay tPC tCP tCPA tRAS tRHCP 35 10 - 50 30 - - 30 200k - 40 10 - 60 35 - - 35 200k - ns ns ns ns ns 7
CAS-before-RAS Refresh Cycle
CAS setup time CAS hold time RAS to CAS precharge time Write to RAS precharge time Write hold time referenced to RAS tCSR tCHR tRPC tWRP tWRH 10 10 5 10 10 - - - - - 10 10 5 10 10 - - - - - ns ns ns ns ns
Semiconductor Group
8
HYM 324020S/GS-50/-60 4M x 32-Bit
Notes:
1) All voltages are referenced to VSS. 2) ICC1, ICC3, ICC4 and ICC6 depend on cycle rate. 3) ICC1 and ICC4 depend on output loading. Specified values are measured with the output open. 4) Address can be changed once or less while RAS = VIL. In the case of ICC4 it can be changed once or less during a fast page mode cycle (tPC). 5) An initial pause of 200 s is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device operation is achieved. In case of using internal refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 6) AC measurements assume tT = 5 ns. 7) VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Transition times are also measured between VIH and VIL. 8) Measured with a load equivalent to 2 TTL loads and 100 pF. 9) Operation within the tRCD (max.) limit ensures that tRAC (max.) can be met. tRCD (max.) is specified as a reference point only: If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled by tCAC. 10)Operation within the tRAD (max.) limit ensures that tRAC (max.) can be met. tRAD (max.) is specified as a reference point only: If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled by tAA. 11)Either tRCH or tRRH must be satisfied for a read cycle. 12)tOFF (max.) define the time at which the outputs achieve the open-circuit condition and are not referenced to output voltage levels . 13)tWCS is not a restrictive operating parameter. This is included in the data sheet as electrical characteristics only. If tWCS > tWCS (min.), the cycle is an early write cycle and the I/O pin will remain open-circuit (high impedance) through the entire cycle. 14)These parameters are referenced to the CAS leading edge.
Semiconductor Group
9
HYM 324020S/GS-50/-60 4M x 32-Bit
Package Outline
107.95 3.38 101.19
22.86
6.35
R1.57
1.27 2.03 6.35 95.25
R 1.57 +/- 0.05 6.35 +/- 0.05
+/- 0.05
10.16
3.18
5.28 max
1.27
+0.10 -0.08
Detail of Contacts
0.25 max
1.27
1.04 +/- 0.05 GLS05835
Tolerances : +/- 0.13 unless otherwise specified
Module Package, L-SIM-72-12 (Single in-Line Memory Module)
Semiconductor Group
2.54 min
10

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